UGB8BTHE3_A/I Product Introduction:
Vishay Semiconductor - Diodes Division Part Number UGB8BTHE3_A/I(Diodes - Rectifiers - Single), developed and manufactured by Vishay Semiconductor - Diodes Division, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
UGB8BTHE3_A/I is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the Vishay General Semiconductor - Diodes Division UGB8BTHE3_A/I, a cutting-edge diode designed to meet the demands of various applications. With its advanced features and exceptional performance, this diode is set to revolutionize the industry.
The UGB8BTHE3_A/I diode boasts a high surge capability of up to 8000 W, making it ideal for applications that require robust protection against voltage spikes and surges. Its low forward voltage drop ensures minimal power loss, resulting in improved energy efficiency and reduced operating costs. Additionally, this diode offers a low leakage current, ensuring reliable and stable operation.
This diode is suitable for a wide range of applications, including power supplies, industrial equipment, automotive electronics, and telecommunications. Its high surge capability makes it perfect for protecting sensitive electronic components from voltage transients, ensuring their longevity and reliability. The low forward voltage drop and low leakage current make it an excellent choice for energy-efficient designs, where power consumption is a critical factor.
The UGB8BTHE3_A/I diode is manufactured by Vishay General Semiconductor, a renowned leader in the semiconductor industry. With their commitment to quality and innovation, you can trust that this diode will deliver exceptional performance and reliability.
In conclusion, the Vishay General Semiconductor - Diodes Division UGB8BTHE3_A/I is a state-of-the-art diode that offers high surge capability, low forward voltage drop, and low leakage current. Its versatility and exceptional performance make it the perfect choice for a wide range of applications, ensuring reliable and efficient operation.
Rectifiers - Single refers to a standalone rectifier device, which usually contains one or several rectifying elements (such as diodes), and its core function is to convert alternating current (AC) to direct current (DC). Specifically, it takes advantage of the unidirectional conductivity of semiconductor diodes, allowing current to pass in only one direction, thus enabling the conversion from fluctuating alternating current to stable direct current.
Application
Rectifiers are used in an extremely wide range of applications, covering almost all situations where DC power is required. In terms of power supply equipment, rectifiers are widely used in power transformers, switching power supplies, etc., to provide stable DC power for various electronic equipment. In the field of lighting, with the popularity of new light sources such as LED, rectifier-single also plays an important role, it can convert alternating current into direct current to drive LED lights and other light-emitting devices, to achieve energy-efficient lighting effects. In addition, in many fields such as industrial automation, communication equipment, automotive electronics, medical equipment, rectifiers also play an irreplaceable role. Especially in the field of industrial automation, rectifiers - provide a stable DC power supply for motors, frequency converters and other equipment, ensuring the stable operation of the production line and efficient production.
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SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
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