Vishay Semiconductor - Diodes Division VS-GB150LH120N
- VS-GB150LH120N
- Vishay Semiconductor - Diodes Division
- IGBT MOD 1200V 300A INT-A-PAK
- Transistors - IGBTs - Modules
- VS-GB150LH120N Datasheet
- Double INT-A-PAK (3 + 4)
- Bulk
-
Lead free / RoHS Compliant
- 1404
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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Part Number VS-GB150LH120N |
Category Transistors - IGBTs - Modules |
Manufacturer Vishay Semiconductor - Diodes Division |
Description IGBT MOD 1200V 300A INT-A-PAK |
Package Bulk |
Series - |
Operating Temperature -40°C ~ 150°C (TJ) |
Mounting Type Chassis Mount |
Package / Case Double INT-A-PAK (3 + 4) |
Supplier Device Package Double INT-A-PAK |
Power - Max 1389 W |
Configuration Single |
Current - Collector (Ic) (Max) 300 A |
Voltage - Collector Emitter Breakdown (Max) 1200 V |
Current - Collector Cutoff (Max) 1 mA |
IGBT Type - |
Vce(on) (Max) @ Vge, Ic 1.87V @ 15V, 150A (Typ) |
Input Capacitance (Cies) @ Vce 10.6 nF @ 25 V |
Input Standard |
NTC Thermistor No |
Package_case Double INT-A-PAK (3 + 4) |
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