Vishay Semiconductor - Diodes Division VS-GB200TH120U
- VS-GB200TH120U
- Vishay Semiconductor - Diodes Division
- IGBT MOD 1200V 330A INT-A-PAK
- Transistors - IGBTs - Modules
- VS-GB200TH120U Datasheet
- Double INT-A-PAK (3 + 4)
- Bulk
- Lead free / RoHS Compliant
- 9207
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number VS-GB200TH120U |
Category Transistors - IGBTs - Modules |
Manufacturer Vishay Semiconductor - Diodes Division |
Description IGBT MOD 1200V 330A INT-A-PAK |
Package Bulk |
Series - |
Operating Temperature 150°C (TJ) |
Mounting Type Chassis Mount |
Package / Case Double INT-A-PAK (3 + 4) |
Supplier Device Package Double INT-A-PAK |
Power - Max 1316 W |
Configuration Half Bridge |
Current - Collector (Ic) (Max) 330 A |
Voltage - Collector Emitter Breakdown (Max) 1200 V |
Current - Collector Cutoff (Max) 5 mA |
IGBT Type - |
Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 200A |
Input Capacitance (Cies) @ Vce 16.9 nF @ 30 V |
Input Standard |
NTC Thermistor No |
Package_case Double INT-A-PAK (3 + 4) |
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Customer reviews
Vishay Semiconductor - Diodes Division
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