Vishay Semiconductor - Diodes Division VS-GB50YF120N
- VS-GB50YF120N
- Vishay Semiconductor - Diodes Division
- IGBT MOD 1200V 66A ECONO2 4PACK
- Transistors - IGBTs - Modules
- VS-GB50YF120N Datasheet
- Module
- Bulk
-
Lead free / RoHS Compliant
- 793
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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Part Number VS-GB50YF120N |
Category Transistors - IGBTs - Modules |
Manufacturer Vishay Semiconductor - Diodes Division |
Description IGBT MOD 1200V 66A ECONO2 4PACK |
Package Bulk |
Series - |
Operating Temperature 150°C (TJ) |
Mounting Type Chassis Mount |
Package / Case Module |
Supplier Device Package ECONO2 4PACK |
Power - Max 330 W |
Configuration - |
Current - Collector (Ic) (Max) 66 A |
Voltage - Collector Emitter Breakdown (Max) 1200 V |
Current - Collector Cutoff (Max) 250 µA |
IGBT Type - |
Vce(on) (Max) @ Vge, Ic 4.5V @ 15V, 75A |
Input Capacitance (Cies) @ Vce - |
Input Standard |
NTC Thermistor No |
Package_case Module |
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