VS-GT100TP60N

Vishay Semiconductor - Diodes Division VS-GT100TP60N

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  • VS-GT100TP60N
  • Vishay Semiconductor - Diodes Division
  • IGBT MOD 600V 160A INT-A-PAK
  • Transistors - IGBTs - Modules
  • VS-GT100TP60N Datasheet
  • INT-A-PAK (3 + 4)
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 17934
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
VS-GT100TP60N
Category
Transistors - IGBTs - Modules
Manufacturer
Vishay Semiconductor - Diodes Division
Description
IGBT MOD 600V 160A INT-A-PAK
Package
Bulk
Series
-
Operating Temperature
175°C (TJ)
Mounting Type
Chassis Mount
Package / Case
INT-A-PAK (3 + 4)
Supplier Device Package
INT-A-PAK
Power - Max
417 W
Configuration
Half Bridge
Current - Collector (Ic) (Max)
160 A
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector Cutoff (Max)
5 mA
IGBT Type
Trench
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 100A
Input Capacitance (Cies) @ Vce
7.71 nF @ 30 V
Input
Standard
NTC Thermistor
No
Package_case
INT-A-PAK (3 + 4)

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Vishay Semiconductor - Diodes Division
Vishay Semiconductor - Diodes Division
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