VS-GT200TP065N

Vishay Semiconductor - Diodes Division VS-GT200TP065N

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  • VS-GT200TP065N
  • Vishay Semiconductor - Diodes Division
  • IGBT MOD 650V 221A INT-A-PAK
  • Transistors - IGBTs - Modules
  • VS-GT200TP065N Datasheet
  • INT-A-Pak
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 3564
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
VS-GT200TP065N
Category
Transistors - IGBTs - Modules
Manufacturer
Vishay Semiconductor - Diodes Division
Description
IGBT MOD 650V 221A INT-A-PAK
Package
Tube
Series
-
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Chassis Mount
Package / Case
INT-A-Pak
Supplier Device Package
INT-A-PAK
Power - Max
600 W
Configuration
Half Bridge
Current - Collector (Ic) (Max)
221 A
Voltage - Collector Emitter Breakdown (Max)
650 V
Current - Collector Cutoff (Max)
60 µA
IGBT Type
Trench
Vce(on) (Max) @ Vge, Ic
2.12V @ 15V, 200A
Input Capacitance (Cies) @ Vce
-
Input
Standard
NTC Thermistor
No
Package_case
INT-A-Pak

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Vishay Semiconductor - Diodes Division
Vishay Semiconductor - Diodes Division
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