Vishay Semiconductor - Diodes Division VS-GT50TP60N
- VS-GT50TP60N
- Vishay Semiconductor - Diodes Division
- IGBT MOD 600V 85A 208W INT-A-PAK
- Transistors - IGBTs - Modules
- VS-GT50TP60N Datasheet
- INT-A-PAK (3 + 4)
- Bulk
-
Lead free / RoHS Compliant
- 21588
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number VS-GT50TP60N |
Category Transistors - IGBTs - Modules |
Manufacturer Vishay Semiconductor - Diodes Division |
Description IGBT MOD 600V 85A 208W INT-A-PAK |
Package Bulk |
Series - |
Operating Temperature 175°C (TJ) |
Mounting Type Chassis Mount |
Package / Case INT-A-PAK (3 + 4) |
Supplier Device Package INT-A-PAK |
Power - Max 208 W |
Configuration Half Bridge |
Current - Collector (Ic) (Max) 85 A |
Voltage - Collector Emitter Breakdown (Max) 600 V |
Current - Collector Cutoff (Max) 1 mA |
IGBT Type Trench |
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A |
Input Capacitance (Cies) @ Vce 3.03 nF @ 30 V |
Input Standard |
NTC Thermistor No |
Package_case INT-A-PAK (3 + 4) |
VS-GT50TP60N Guarantees
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