XK1R9F10QB,LXGQ

Toshiba Semiconductor and Storage XK1R9F10QB,LXGQ

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  • XK1R9F10QB,LXGQ
  • Toshiba Semiconductor and Storage
  • MOSFET N-CH 100V 160A TO220SM
  • Transistors - FETs, MOSFETs - Single
  • XK1R9F10QB,LXGQ Datasheet
  • TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 11797
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
XK1R9F10QB,LXGQ
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET N-CH 100V 160A TO220SM
Package
Bulk
Series
U-MOSX-H
Operating Temperature
175°C
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
TO-220SM(W)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
375W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
160A (Ta)
Rds On (Max) @ Id, Vgs
1.92mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
184 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
11500 pF @ 10 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Package_case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage - Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, ...
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