Toshiba Semiconductor and Storage XPN12006NC,L1XHQ
- XPN12006NC,L1XHQ
- Toshiba Semiconductor and Storage
- MOSFET N-CH 60V 20A 8TSON
- Transistors - FETs, MOSFETs - Single
- XPN12006NC,L1XHQ Datasheet
- 8-PowerVDFN
- Tube
-
Lead free / RoHS Compliant
- 934
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number XPN12006NC,L1XHQ |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description MOSFET N-CH 60V 20A 8TSON |
Package Tube |
Series Automotive, AEC-Q101 |
Operating Temperature -55°C ~ 175°C |
Mounting Type Surface Mount |
Package / Case 8-PowerVDFN |
Supplier Device Package 8-TSON Advance-WF (3.1x3.1) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 65W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 60 V |
Current - Continuous Drain (Id) @ 25°C 20A |
Rds On (Max) @ Id, Vgs 12mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id 2.5V @ 0.2mA |
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 10 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case 8-PowerVDFN |
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